毛清华，讲师。主要从事半导体发光材料与器件研究。在国内外期刊上以第一作者发表SCI论文4篇。主持完成省自然科学基金面上项目一项。

研究领域

l 氮化镓半导体器件应用

l 钙钛矿发光器件

主讲课程

l 半导体工艺原理，微电子综合实验

基金项目

l 201807-202106，基于变温电致发光特性分析的绿光LED性能提升研究，安徽省自然科学基金面上项目，1808085MF205.

代表性论文

1. Mao Q, Liu J, Wu X, et al. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J]. Journal of Semiconductors, 2015, 36(9): 093003.

2. Mao Q, Liu J, Quan Z, et al. Enhanced Performance of GaInN LEDs by Abrupt Mg Doped p-AlGaN Electron Blocking Layer[J]. ECS Journal of Solid State Science and Technology, 2014, 4(3): R44.

3. Qing-Hua M, Feng-Yi J, Hai-Ying C, et al. p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substrates[J]. Acta Physica Sinica, 2010, 59(11): 8078-8082.

4. Qing-Hua M, Jun-Lin L, Zhi-Jue Q, et al. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode[J]. Acta Physica Sinica, 2015, 64(10).